Operation of a novel, dual function thin slab ultrafast amplifier at 1030nm, 515nm and 343nm

材料科学 脉冲持续时间 光电子学 超短脉冲 皮秒 飞秒 二次谐波产生 放大器 能量转换效率 光学 物理 激光器 CMOS芯片
作者
Jason Lee,Rolf B. Birch,Benjamin Fulford,D.J.L. Birkin
标识
DOI:10.1117/12.2544278
摘要

Industrial applications increasingly demand femtosecond and picosecond pulse duration laser systems with a range of wavelengths from the near infrared to the ultraviolet. This paper reports a dual function thin slab femtosecond amplifier system operating at a range of wavelengths via frequency conversion. A Yb:YAG thin slab amplifier was demonstrated that incorporates both the pre-amplifier and power amplifier functions in a single crystal. To ensure efficient, homogenous pumping of the thin slab a novel diode bar imaging technique is used. The combination of the homogenous pumping and the unique amplifier architecture enables average output powers < 200 W to be maintained across a range of pulse repetition frequencies from 1 MHz to 40 MHz with a pulse duration of 50 ps at a wavelength of 1030 nm and M2 ~ 1.2. The pulse was compressed to a duration of 900 ± 100 fs with a compressor efficiency of < 90 %. A modified LXR100 system which is based on this technology was used as the fundamental 1030 nm source, with output powers up to 130 W, from 1 MHz – 10 MHz and pulse durations in the 900 fs regime. Second harmonic generation of 515 nm was achieved by coupling the beam into a type-1 critically phase matched LBO crystal to enable efficient conversion whilst avoiding damage. Second harmonic generation of 515 nm to < 95 W at a conversion efficiency of ~74 % and pulse energy of < 96 μJ and M2 < 1.3 was achieved. Further wavelength conversion was undertaken by coupling the 515 nm and unconverted 1030 nm output into a second LBO crystal for third harmonic generation. Type-1 and type-2 phasematching configurations for third harmonic generation were investigated, with an output power of < 20 W and pulse energy of < 20 μJ achieved at 343 nm with a conversion efficiency with respect to incident 1030 nm of < 21 % for both configurations.
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