带偏移量
材料科学
带隙
异质结
半导体
偏移量(计算机科学)
原子单位
宽禁带半导体
电子能带结构
离子键合
价带
导带
原子物理学
凝聚态物理
分析化学(期刊)
分子物理学
光电子学
化学
离子
物理
电子
有机化学
色谱法
量子力学
计算机科学
程序设计语言
出处
期刊:AIP Advances
[American Institute of Physics]
日期:2020-12-01
卷期号:10 (12)
被引量:9
摘要
We presented a simple estimation method for band alignment of semiconductor alloys based on the atomic solid-state energy (SSE) scale. Our method has the advantage that natural band alignment can be determined using the SSE and energy gap of materials. We investigated several examples of the valence band offset and conduction band offset for β-(AlxGa1−x)2O3 related heterostructures, and our results were in good agreement with previous experimental data. These results indicated that simple and practical prediction of the band offset and alignment of ionic bonded semiconductors can be attained.
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