A 6–12 GHz wideband low‐noise amplifier GaAs FET design with 0.8‐dB average NF and 25‐dB gain

Abstract Low‐noise amplifiers (LNAs) with low‐noise performance are critical components in communication systems. However, reaching a high level of performance is difficult. This study introduces a LNA for radio frequency front‐end receivers with a frequency range of 6–12 GHz. The planned LNA contains a two‐stage high‐electron‐mobility transistor cascade amplifier with a minimum measured noise figure of 0.8 dB and a peak gain of 25 dB at room temperature. The proposed LNA is based on a gallium arsenide field‐effect transistor transistor (CE3512K2) because of its good low‐noise performance at microwave frequency bands. The measured results demonstrate that the proposed LNA is perfectly matched over the whole operational frequency spectrum of the input/output ports (| S 11 |<−10 dB, | S 22 |<−10 dB). Also, output P1dB and input P1dB are, respectively, +4 and −19 dBm for this design. The suggested LNA is suitable for C and X frequency band applications.