Preparation of MAPbI3 perovskite film by pulsed laser deposition for high-performance silicon-based heterojunction photodetector

材料科学 通量 响应度 脉冲激光沉积 薄膜 扫描电子显微镜 异质结 光电子学 钙钛矿(结构) 光电探测器 激光器 带隙 光学 分析化学(期刊) 纳米技术 化学 复合材料 结晶学 物理 色谱法
作者
Raid A. Ismail,Rana K. Abdulnabi,Omar A. Abdulrazzaq,Muslim F. Jawad
出处
期刊:Optical Materials [Elsevier BV]
卷期号:126: 112147-112147 被引量:13
标识
DOI:10.1016/j.optmat.2022.112147
摘要

This study investigates the preparation and characterization of CH3NH3PbI3 (MAPbI3) perovskite thin films. The films were prepared using a one-step pulsed laser deposition technique at different laser fluences. Structural, optical, and electrical properties of CH3NH3PbI3 films were investigated at various laser fluences. The X-ray diffraction (XRD) studies confirm the formation of β-MAPbI3 films. The optical energy gap of MAPbI3 perovskite film was calculated and is found to be in the range of 1.53–1.68 eV. Scanning electron microscope (SEM) analysis reveals the formation of rod-like and platelet morphologies, while energy dispersive X-ray spectroscopy analysis reveals that the [I]/[Pb] ratio of the films prepared with 2, 2.5, and 3 J/cm2 was 1.3, 2.3, and 1.36, respectively. Hall effect results confirm that the MPPbI3 films are p-type and the mobility of MAPbI3 film decreases from 0.26 to 0.084 cm2V−1s−1 as laser fluence increases from 2 to 3 J/cm2. The optoelectronic characteristics of the p-MAPbI3/n-Si photodetector were investigated as a function of laser fluence. By selecting an optimum laser fluence, a maximum responsivity of 2.57 A/W and an external quantum efficiency of 7.08 × 102% at 450 nm were obtained. The energy band lineup of the p-MAPbI3/n-Si photodetector fabricated with 2.5 J/cm2 was constructed.
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