皮秒
放大器
光学
激光器
物理
功率(物理)
激光功率缩放
材料科学
光电子学
CMOS芯片
量子力学
作者
Bingnan Shi,Jiatong Li,Shuai Ye,Hongkun Nie,Kejian Yang,Jingliang He,Tao Li,Baitao Zhang
出处
期刊:Optics Express
[The Optical Society]
日期:2022-03-17
卷期号:30 (7): 11026-11026
被引量:2
摘要
A modified Frantz-Nodvik (F-N) equation and a simple one-dimensional unfolded slicing model for numerically simulating high-power Innoslab picosecond amplifier are developed for the first time. The anisotropic stimulated emission cross-section of laser crystal, the influence of the tilted optical path, the spatial overlap of the seed and pump laser, as well as the pump absorption saturation effect are considered. Based on the as-developed model, 4-, 6- and 8-pass schemes high-power Nd:YVO4 Innoslab picosecond amplifiers are designed with output powers of 76.2 W, 81.4 W, and 85.5 W, respectively. The experimental results agree well with that of numerical simulation, indicating that our model is a powerful tool and paves a new way for designing and optimizing high-power Innoslab picosecond laser amplifier.
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