Evaluation of Reduced Graphene Oxide Film Using In-Plane XRD Measurement

This work reports the synthesis of rGO using magnetron sputtering followed by the annealing process in argon. Raman mapping analysis helped confirm the existence of D, G and 2D band after annealing which indicating the formation of rGO and not a monolayer of graphene. Out of plane XRD measurement observed 21.5°, 30.1° and 35.5° corresponding to d-spacing and 0.412 nm, 0.296 nm and 0.253 nm respectively and for in plane XRD measurement are observed at are 2θ peaks at 30.1°, 35.5° and 62.4° corresponding to d-spacing 0.296 nm ,0.253 nm and 0.148 nm respectively. All the spectrum shows shifted due to the presence of defect in the deposited rGO structure. Thus, the in plane measurement are successfully demonstrated as an alternative method to evaluate the thin rGO film.