材料科学
异质结
退火(玻璃)
光致发光
分子束外延
高电子迁移率晶体管
量子阱
超晶格
光电子学
蓝移
外延
衍射
光学
纳米技术
晶体管
激光器
物理
图层(电子)
电压
量子力学
复合材料
作者
E.I. Vasilkova,А. Н. Клочков,А. Н. Виниченко,Н. Каргин,И. С. Васильевский
标识
DOI:10.1016/j.surfin.2022.101766
摘要
The effect of 5 min high-temperature thermal annealing on InGaAs/GaAs strained superlattices and InGaAs/AlGaAs PHEMT structures grown by molecular beam epitaxy was studied using the Hall measurements, photoluminescence spectroscopy, and high-resolution X-ray diffraction. InGaAs/GaAs superlattices are shown to undergo photoluminescence peak energy blueshift after 700 °C annealing and distinguishable heterointerface roughening after 800 °C annealing. The magnitude of quantum well smoothing, caused by annealing induced III-group atom interdiffusion, was estimated experimentally using secondary ion mass spectrometry and X-ray reflectivity, and calculated from the modelled electron energy spectra in the diffused wells. InGaAs/AlGaAs PHEMTs appear to be more sensitive to annealing, demonstrating optical and structural changes of a similar nature to InGaAs/GaAs heterostructures, as well as transport properties degradation, at a wider range of annealing temperatures starting 500 °C.
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