Perovskite p–n Junctions: Strong Depletion in Hybrid Perovskite p–n Junctions Induced by Local Electronic Doping (Adv. Mater. 15/2018)

In article number 1705792, Yupeng Zhang, Han Zhang, Qiaoliang Bao, and co-workers report spatially controlled doping of individual organic–inorganic hybrid perovskite nanosheets through surface transfer doping. The resulting lateral p–n junctions exhibit unprecedentedly strong carrier-depletion characteristics with an ultrabroad depletion region up to 10 μm, which leads to highly efficient photodiodes with zero power consumption.