异质结
材料科学
半导体
化学气相沉积
范德瓦尔斯力
纳米技术
氧化物
基质(水族馆)
光电子学
冶金
化学
分子
有机化学
海洋学
地质学
作者
Qundong Fu,Xiaowei Wang,Jiadong Zhou,Juan Xia,Qingsheng Zeng,Danhui Lv,Chao Zhu,Xiaolei Wang,Yue Shen,Xiaomin Li,Younan Hua,Fucai Liu,Zexiang Shen,Chuanhong Jin,Zheng Liu
标识
DOI:10.1021/acs.chemmater.7b05117
摘要
Chemical vapor deposition (CVD) has proven its surpassing advantages, such as larger scale, interlayer orientation control, and clean interface, in the synthesis of transitional metal dichalcogenide (TMDC) semiconductor/semiconductor van der Waals (vdW) heterostructures. However, it is suffering problems of high melting points and low chemical reactivity of metal oxide feedstocks in the preparation of high-quality metal/semiconductor (M/S) TMDC vdW heterostructures. Here, for the first time, we report the synthesis of the M/S TMDC vdW heterostructure NbS2/MoS2 via a one-step halide-assisted CVD method, which effectively overcomes the drawbacks of metal oxide precursors. This one-step method provides the high quality and clean interface of the NbS2/MoS2 heterostructure, which has been proved by the transmission electron microscopy characterization. A mechanism that MoS2 finishes the growth first and subsequently serves as a superior substrate for the growth of NbS2 is proposed. This novel method will open up new opportunities in the syntheses of other M/S TMDC vdW heterostructures and will facilitate the research of the TMDC M/S interface.
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