(Invited) Narrow Band Emission of Nitrides Phosphors and All Inorganic Perovskite Quantum Dots for the Application in Light Emitting Diodes

A narrow band emission nitride SrLiAl 3 N 4 :Eu 2+ (SLA) red phosphor prepared through a high-pressure solid state reaction was coated with organosilica layers in 400 ~ 600 nm thickness to improve its waterproof property. The coated samples showed excellent moisture resistance while retaining an external quantum efficiency (EQE) of 70% of its initial EQE after being aged for 5 days in harsh conditions. White light-emitting diodes (LEDs) of SLA red-phosphors and commercial Y 3 Al 5 O 12 :Ce 3+ (YAG:Ce) yellow-phosphor on a blue-InGaN chip were shown high color rendition (CRI = 89, R9 = 69) and low correlated color temperature of 2406 K. All-inorganic CsPbX 3 (X = Cl, Br, I) perovskite quantum dots (PQDs) with narrow emission bad were synthesized by hot injection methods. We propose an efficient and simple method to prevent the anion-exchange effect. We mixed green CsPbBr 3 PQDs with purchased mesoporous silica. We applied the new PQD-based LEDs for backlight displays. Our white LED device for backlight display passed through a color filter with an NTSC value of 113% and Rec. 2020 of 85%. For lighting application, we used red perovskite quantum dots assisted by a yellow YAG:Ce phosphor were integrated on a blue chip. This warm white light with CCT (3328K), high color rendering index (CRI = 84.7) and a super high value of saturated red color component R9 as 96. Nitrides phosphors and all inorganic quantum dots were a good candidate for the application of white light LEDs with narrow emission band.