材料科学
石墨烯
基质(水族馆)
拉曼光谱
光电子学
纳米技术
氮化硼
图层(电子)
电介质
带隙
光学
海洋学
物理
地质学
作者
Jingyuan Zhou,Ziqian Xie,Rong Liu,Xin Gao,Jiaqiang Li,Yan Xiong,Lianming Tong,Jin Zhang,Zhongfan Liu
标识
DOI:10.1021/acsami.8b02612
摘要
Graphdiyne is predicted to have a natural band gap and simultaneously possesses superior carrier mobility, which makes it potential for electronic devices. Synthesis of ultrathin graphdiyne film is highly demanded. In this work, we proposed an approach for synthesis of ultrathin graphdiyne film using graphene as a surface template, which can induce confined reaction on substrate. With all-carbon, conjugated, atomically flat structure, graphene has a strong interaction with the graphdiyne system, resulting the formation of continuous flat ultrathin graphdiyne film with thickness less than 3 nm. Raman spectra, grazing incidence X-ray diffraction, and transmission electron microscopy characterization all confirmed the features of graphdiyne. Furthermore, this strategy was also extended to the hexagonal boron nitride (hBN) surface with resembling structure, serving as a perfect dielectric layer. Field-effect transistor devices based on graphdiyne film grown on hBN were fabricated directly, and electrical transport measurements demonstrate the good conductivity with p-type characteristics of the as-obtained graphdiyne film.
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