闪光灯(摄影)
与非门
闪存
计算机科学
计算机硬件
电荷陷阱闪光灯
材料科学
作者
Rino Micheloni,Seiichi Aritome,Luca Crippa
出处
期刊:Springer series in advanced microelectronics
日期:2018-01-01
卷期号:: 105-133
被引量:2
标识
DOI:10.1007/978-981-13-0599-3_5
摘要
Nowadays, Solid State Drives consume an enormous amount of NAND Flash memories [1] causing a restless pressure on increasing the number of stored bits per mm2. Planar memory cells have been scaled for decades by improving process technology, circuit design, programming algorithms [2], and lithography.
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