钝化
降级(电信)
材料科学
共发射极
硅
紫外线
太阳能电池
光电子学
可靠性(半导体)
载流子寿命
氢
纳米技术
计算机科学
图层(电子)
化学
电信
有机化学
功率(物理)
物理
量子力学
作者
Feng Ye,Yunpeng Liu,Weiwei Deng,Haiyan Chen,Guangming Liao,Feng Zhu,Ningyi Yuan,Jianning Ding
出处
期刊:Solar Energy
[Elsevier]
日期:2018-08-01
卷期号:170: 1009-1015
被引量:10
标识
DOI:10.1016/j.solener.2018.06.044
摘要
The reliability of the long-term operation of multicrystalline silicon (mc-Si) modules is very important due to its large market share. However, mc-Si modules show significant degradation over time, when exposed to sunlight. In this paper, the changes in the electrical characteristics, before and after ultraviolet-induced degradation (UV-ID), were monitored in mc-Si passivated-emitter–rear-contact (PERC) cells. We first demonstrate that UV light causes the formation of defects in the bulk of solar cells, rather than destroying the surface passivation. An advanced hydrogen passivation process is performed to inhibit the bulk degradation and it is found that UV-ID is effectively suppressed on either the cell or the module.
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