Atomic Layer Deposition: Atomic Layer Deposition of Al 2 O 3 Directly on 2D Materials for High‐Performance Electronics (Adv. Mater. Interfaces 10/2019)

A modified atomic layer deposition (ALD) approach in which one cycle includes one incremental organometallic pulse and multiple H2O pulses is developed to directly deposit uniform and high-quality high-κ dielectric layer on chemically inert 2D-materials without introducing any structural damages. The Al2O3 layer is integrated into MoS2 based flexible devices and exhibits excellent performances, indicating this approach is compatible for 2D-material electronics. More details can be found in article number 1802055 by Na Li, Rong Yang, Guangyu Zhang, and co-workers.