带隙
碲
光伏系统
材料科学
制作
光电子学
半导体
宽禁带半导体
太阳能
电气工程
冶金
医学
工程类
病理
替代医学
作者
Ido Hadar,Xiaobing Hu,Zhong‐Zhen Luo,Vinayak P. Dravid,Mercouri G. Kanatzidis
出处
期刊:ACS energy letters
[American Chemical Society]
日期:2019-08-06
卷期号:4 (9): 2137-2143
被引量:48
标识
DOI:10.1021/acsenergylett.9b01619
摘要
In this Letter, we report the alloying of the high-band-gap photovoltaic elemental absorber selenium with the isomorphic low-band-gap semiconductor tellurium to tune the band gap energy of Se1–xTex to the optimal value for photovoltaic absorber. Photovoltaic devices based on crystalline Se1–xTex alloys are promising candidates for extremely cheap and highly scalable solar cells, offering simple low-temperature fabrication and intrinsic stability. We explore the electro-optical properties of Se1–xTex alloys and show that the tellurium red shifts the band gap in a nonlinear manner, faster than expected, due to significantly nonlinear change of the conduction band energy, allowing them to easily reach the desired band gap of 1.2–1.4 eV. On the basis of these results, we rationally design and demonstrate the fabrication of simple Se1–xTex photovoltaic devices, showing significantly improved current density in comparison to pure selenium. Furthermore, we identify and analyze the main factors limiting the device efficiency and suggest a few approaches for future improvements of such photovoltaic devices.
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