材料科学
蓝宝石
光电子学
金属有机气相外延
场效应晶体管
化学气相沉积
MOSFET
晶体管
退火(玻璃)
蓝宝石上的硅
制作
栅氧化层
氧化物
外延
硅
纳米技术
电压
电气工程
绝缘体上的硅
光学
医学
病理
图层(电子)
激光器
替代医学
冶金
物理
工程类
复合材料
作者
Ji-Hyeon Park,Ryan McClintock,Alexandre Jaud,Arash Dehzangi,Manijeh Razeghi
标识
DOI:10.7567/1882-0786/ab3b2a
摘要
We fabricated β-Ga2O3:Si metal-oxide field-effect transistors (MOSFETs) on c-plane sapphire substrates which typically showed maximum drain current of 100 mA mm−1. β-Ga2O3:Si thin films were realized on c-plane sapphire substrates through a combination of metalorganic chemical vapor deposition and post-annealing. The MOSFET device presented excellent on/off drain current ratio of ∼1011 with very low gate leakage current, sharp pinch off behavior, and a breakdown voltage of 400 V at VG = −40 V. The growth and fabrication of β-Ga2O3:Si MOSFETs on c-plane sapphire is valuable to its demonstration of the great potential for future high-power electronic devices.
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