响应度
异质结
材料科学
光电子学
光电探测器
紫外线
比探测率
光学
物理
作者
Ranran Zhuo,Longhui Zeng,Huiyu Yuan,Di Wu,Yuange Wang,Zhifeng Shi,Tingting Xu,Yongtao Tian,Xinjian Li,Yuen Hong Tsang
出处
期刊:Nano Research
[Springer Nature]
日期:2018-09-18
卷期号:12 (1): 183-189
被引量:208
标识
DOI:10.1007/s12274-018-2200-z
摘要
The research of ultraviolet photodetectors (UV PDs) have been attracting extensive attention, due to their important applications in many areas. In this study, PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional (2D) PtSe2 film on n-GaN substrate. The PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage. Further analysis reveals that a high responsivity of 193 mA·W–1, an ultrahigh specific detectivity of 3.8 × 1014 Jones, linear dynamic range of 155 dB and current on/off ratio of ~ 108, as well as fast response speeds of 45/102 μs were obtained at zero bias voltage. Moreover, this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns. Such high-performance PtSe2/GaN heterojunction UV PD demonstrated in this work is far superior to previously reported results, suggesting that it has great potential for deep UV detection.
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