异质结
外延
高分辨率透射电子显微镜
纳米电子学
纳米结构
材料科学
光电子学
纳米技术
分子束外延
超晶格
格子(音乐)
透射电子显微镜
物理
图层(电子)
声学
作者
Riya Bose,A. H. M. Abdul Wasey,G. P. Das,Narayan Pradhan
摘要
Composing together the experimental as well as the simulated results, we demonstrate here the atomic placements and the electronic structure at the epitaxial junction of a solution-processed heteronanostructure Au-ZnSe. Despite the large lattice mismatch (∼32%) between fcc Au and zinc-blende structured ZnSe, the heterostructures are formed via coincidence site epitaxy, which appears periodically because of the arrangements of their proper unit cell placements at the junction. This reduces the interface energy and drives the formation of such heteronanostructures. Details of the physical processes involved in the formation of these nanostructures have been discussed in this letter, and epitaxy at the heterojunction is strongly supported by HRTEM measurement and DFT calculation. This material has the possibility of plasmon-exciton coupling and therefore might be a futuristic material for utilizations in catalysis, nanoelectronics, and other related applications.
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