材料科学
钙钛矿(结构)
电致发光
异质结
光电子学
量子点
发光二极管
电流密度
二极管
纳米技术
物理
化学
结晶学
量子力学
图层(电子)
作者
Jingjing Liu,Xuexi Sheng,Yangqing Wu,Dongke Li,Jianchun Bao,Yang Ji,Zewen Lin,Xiangxing Xu,Linwei Yu,Jun Xu,Kunji Chen
标识
DOI:10.1002/adom.201700897
摘要
Abstract Light‐emitting diodes based on perovskite quantum dots have attracted much attention since they can be applied in low‐cost display, biosensors, and other optoelectronic devices. Here, all‐inorganic light‐emitting diodes based on n‐type perovskite quantum dots/p‐Si heterojunction are fabricated. Both the green and the red light emission are achieved at room temperature. The output power density is 0.14 mW cm −2 for green light device and 0.25 mW cm −2 for the red one. The relatively low turn on voltage and high emission intensity in red light device can be attributed to the small hole injection barrier between CsPbI 3 quantum dots and p‐Si. The emission drop off at high current density is observed under direct current (DC) driving mode, which is significantly improved by applying alternating current (AC) square pulses. The enhanced electroluminescence and the improved operation stability at high current density under AC driving mode can be attributed to the less thermal degradation and the reduced charge accumulation in the interface defect states due to the alternated biases. The results demonstrate the possibility of integrating the perovskite quantum dots with Si platform, which will be helpful to extend their actual applications.
科研通智能强力驱动
Strongly Powered by AbleSci AI