Compact model of ferroelectric-gate field-effect transistor for circuit simulation based on multidomain Landau–Kalathnikov theory

We report a new compact model for a ferroelectric-gate field-effect transistor (FeFET) considering multiple ferroelectric domain structures that can be thermally activated. The dynamics of the electric polarization and the thermal activation rate are calculated on the basis of the Landau–Khalatnikov (LK) theory. We implement this compact model in a circuit simulator, SmartSPICE, using Verilog-A language for analog circuit simulations. The device characteristics of FeFETs reported in experiments are well fitted by our compact model. We also perform the circuit simulation for the inverter utilizing FeFETs by using this compact model. Unlike normal inverters composed of MOSFETs, the switching speed of the inverter changes with the voltage pulse before the operation.