过电位
塔菲尔方程
材料科学
纳米线
电催化剂
钒
兴奋剂
催化作用
线性扫描伏安法
分解水
化学工程
法拉第效率
循环伏安法
氢
纳米技术
电化学
电极
物理化学
光电子学
化学
光催化
有机化学
冶金
工程类
作者
Yuanju Qu,Mingyang Yang,Jianwei Chai,Zhe Tang,Mengmeng Shao,Chi Tat Kwok,Ming Yang,Zhenyu Wang,Daniel H. C. Chua,Shijie Wang,Zhouguang Lu,Hui Pan
标识
DOI:10.1021/acsami.6b13244
摘要
Ni3S2 nanowire arrays doped with vanadium(V) are directly grown on nickel foam by a facile one-step hydrothermal method. It is found that the doping can promote the formation of Ni3S2 nanowires at a low temperature. The doped nanowires show excellent electrocatalytic performance toward hydrogen evolution reaction (HER), and outperform pure Ni3S2 and other Ni3S2-based compounds. The stability test shows that the performance of V-doped Ni3S2 nanowires is improved and stabilized after thousands of linear sweep voltammetry test. The onset potential of V-doped Ni3S2 nanowire can be as low as 39 mV, which is comparable to platinum. The nanowire has an overpotential of 68 mV at 10 mA cm-2, a relatively low Tafel slope of 112 mV dec-1, good stability and high Faradaic efficiency. First-principles calculations show that the V-doping in Ni3S2 extremely enhances the free carrier density near the Fermi level, resulting in much improved catalytic activities. We expect that the doping can be an effective way to enhance the catalytic performance of metal disulfides in hydrogen evolution reaction and V-doped Ni3S2 nanowire is one of the most promising electrocatalysts for hydrogen production.
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