Stress Evolution During Nanoindentation in Open TSVs

We applied a nanoindentation technique in an open through silicon via structure by means of simulations. During nanoindentation, a spherical diamond indenter penetrates into the device by applying a force. This penetration causes displacement and deformation of the materials. The simulation results were compared with experimental data, as loading force versus penetration depth. Consequently, we estimated the areas in the structure, in which a mechanical failure due to an external load can be expected. Our simulations revealed the regions with the highest concentration of mechanical stress. These are the critical areas in which the probability of device failure, such as cracking or delamination, is at its highest.