Application of a flexible memristor in self-color electronics and its depth mechanism analysis

Memristor has a high-density information storage capability and can manipulate a large amount of data computing in parallel, so it can be applied in neuromorphic computing. The advanced intelligent applications are one of the major breakthroughs made in the past decade based on the memristor's research. In this work, amorphous Nb2O5 film as functional layers on flexible niobium (Nb) foil were fabricated by anodic oxidation in oxalic acid aqueous solution. A broad spectrum of well-defined color was acquired by varying the anodic voltage during oxidation of the Nb foil. The results of spectroscopic ellipsometry (SE) tests show that the Nb2O5 layers with various colors have different thickness. The willow yellow Nb2O5 film with a thickness of ∼85 nm based memristor show an excellent memristive memory behavior. Finally, it was proposed that the potential well of the ionization center tilts under the external electric field, which causes the probability of charge to escape along and against the direction of the external electric field to explain the memristive effect of the device. This work opens up a new method for fabricating the flexible memristor, which provides the potential applications for next generation self-color electronics.