整改
压电
材料科学
挠曲电
压电系数
范德瓦尔斯力
整流器(神经网络)
光电子学
单层
纳米技术
凝聚态物理
复合材料
电气工程
电压
物理
机器学习
随机神经网络
工程类
量子力学
循环神经网络
人工神经网络
计算机科学
分子
作者
Xingan Jiang,Xiangping Zhang,Ruirui Niu,Qi Ren,Xue Chen,Guoshuai Du,Yabin Chen,Xiao Li Wang,Gang Tang,Jianming Lü,Xueyun Wang,Jiawang Hong
标识
DOI:10.1002/adfm.202213561
摘要
Abstract Most atomically thin piezoelectrics suffer from weak piezoelectric response or current rectification along the thickness direction, which largely hinders their applications in a vertical crossbar architecture. Therefore, exploring new types of ultrathin materials with strong longitudinal piezoelectric coefficient and rectification is highly desired. In this study, the monolayer of van der Waals CuInP2S6 (CIPS) is successfully exfoliated and its strong piezoelectricity in the out‐of‐plane direction with an effective coefficient d33eff of ≈5.12 pm V −1 , which is one or two orders of magnitude higher than that of most existing monolayer materials with intrinsic d33, is confirmed. A prototype vertical device is further constructed and the current rectification is achieved through the flexoelectricity induced by the scanning tip force. The switching between low and high rectification states can be readily controlled by tuning the mechanical loads. These findings manifest that CIPS possesses promising application in vertical nanoscale piezoelectric devices and provides a novel strategy for achieving a good current rectification in ultrathin piezoelectrics.
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