光电探测器
光探测
光电流
同质结
光电子学
响应度
材料科学
异质结
光电二极管
神经形态工程学
纳米技术
计算机科学
人工神经网络
机器学习
作者
Fan Liu,Lin Xi,Yuting Yan,Xuetao Gan,Yingchun Cheng,Xiaoguang Luo
出处
期刊:Nano Letters
[American Chemical Society]
日期:2023-12-13
卷期号:23 (24): 11645-11654
被引量:4
标识
DOI:10.1021/acs.nanolett.3c03500
摘要
Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hBN/graphene semi-floating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 channel can be reconfigured from an n+-n to a p-n homojunction, and the photocurrent transition changes from negative to positive values. Scanning photocurrent mapping reveals that the negative and positive photocurrents are attributed to Schottky junction and p-n homojunction, respectively. In the p-n configuration, the device demonstrates self-driven, linear, rapid response (~3 ms), and broadband sensitivity (from 405 to 1500 nm) for photodetection, with typical performances of responsivity at ~0.5 A/W and detectivity ~1.6*10^12 Jones under 635 nm illumination. These outstanding photodetection capabilities emphasize the potential of the semi-floating photodetector as a pioneering approach for advancing logical and nonvolatile optoelectronics.
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