三元运算
价(化学)
从头算
原子轨道
氧化物
材料科学
从头算量子化学方法
带隙
电子结构
结合能
单独一对
化学
结晶学
计算化学
原子物理学
物理
有机化学
程序设计语言
冶金
分子
电子
计算机科学
量子力学
光电子学
作者
Yaoqiao Hu,Darrell G. Schlom,Suman Datta,Kyeongjae Cho
标识
DOI:10.1021/acs.chemmater.3c02178
摘要
Recent work on searching for high mobility p-type oxides have led to the identification of several promising p-type oxide candidates. Among them, post-transition metal cations, including Sn2+, Pb2+, Sb3+, Tl1+, and Bi3+ are good materials space for high performance p-type oxides design due to their occupied lone-pair s orbitals hybridizing with the O-2p orbital at the valence band edge. However, few of them have been experimentally proven applicable until now, due to their weak phase stability such as SnO or limited p-type dopability like Ba2BiTaO6. In this work, we focus on Pb2+ chemistry which has not been previously investigated, to design phase stable and hole dopable p-type oxides. It is found that the atomic orbital energy level of Pb-6s in Pb2+-based oxides is deep and thus guarantees a stable Pb2+ valence stability as well as compound phase stability. While monoxide PbO has spontaneous formation of oxygen vacancy limiting its p-type dopability, Pb2+ ternary compounds Pb2+–O–X containing a third element X show high hole dopability as well as other good p-type oxide performances including wide band gap, high hole mobility, and robust phase stability. Several promising candidates, including K2Pb2O3, TiPbO3, As2PbO6, and Sb2PbO6 are identified. These results broaden the current p-type oxide materials design space and provide guidance to the experimental realization of phase stable and hole dopable high-performance p-type oxides.
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