逻辑电平
泄漏(经济)
CMOS芯片
电气工程
晶体管
传播延迟
电压
材料科学
低功耗电子学
低压
电子工程
阈值电压
工程类
光电子学
功率(物理)
物理
功率消耗
量子力学
宏观经济学
经济
作者
Ang Yuan,H. S. Zhao,Xiao Wang,Zhi Liu,Shushan Qiao
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2024-03-01
卷期号:71 (3): 1406-1410
标识
DOI:10.1109/tcsii.2023.3323016
摘要
This brief presents an ultra-low leakage and fast conversion level shifter with wide-range voltage conversion and frequency. The proposed level shifter adopts the leakage shut-off transistors, which can completely cut off the static current when the circuits stand by. The pull-down network employs the low-threshold transistor for the fast fall transition. The proposed level shifter also solves the swing problem and achieves a fast conversion by using the voltage hysteresis transistor, strengthening the pull-up network to ensure the internal node is fast and fully charged. Measurement results based on the 55 nm process show that the average ultra-low leakage of the proposed level shifter is 34.8 pW when converting from 0.3 V input to 1.2 V output. Meanwhile, the average propagation delay and the average energy per transition of the proposed level shifter are 13.86 ns and 22.71 fJ for an input frequency of 1 MHz, respectively. The maximum conversion range is from 0.13 V to 1.2 V.
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