Graphene on SiO2/Si and Al2O3 under thermal annealing and electric current: Competition of dopant desorption and conformation to substrate

In this work, we study phonon and electronic properties of graphene on SiO2/Si and Al2O3 by simultaneous Raman and electrical measurements in the temperature range from room temperature to 550 °C, or at voltages from 20 to −20 V. The dependencies of G and 2D peak parameters and electrical resistance on temperature and voltage made it possible to observe in situ a competition between the p-type adsorbate removal from graphene surface and substrate-induced doping due to graphene-substrate conformality increase, both stimulated by either ambient or Joule heating. The analyzed parameters were dominated by the conformality increase, with the hole density increasing significantly and unidirectionally, while resistance and I-V curves fluctuated due to the competition. Having calculated Raman peak shift temperature coefficients, resistance temperature coefficients, total variations of carrier density, resistance and strain, we show that Al2O3 substrate can be used to reduce the desorption barrier, the overall doping, the impact on graphene resistance and on phonon anharmonicity – however, it should be used with regard to the possibility of introducing strain or stronger doping after longer treatments. The conformality effects should be taken into account when performing annealing, as well as graphene applications for sensors or strong electric currents.