Perspective Roadmap of Advanced HfO2-based Ferroelectric Field Effect Transistors

The discovery of ferroelectricity in hafnium oxide (HfO 2 ) has proved to be a game changer in the potential applications of ferroelectric non-volatile memories (NVM) in mainstream electronics. This paper discusses the present status, potential, and challenges facing ferroelectric field effect transistor (FeFET) memories and sketches promising technology evolution for the next decade and the most exciting applications.