半最大全宽
材料科学
系统间交叉
量子效率
光电子学
共发射极
有机发光二极管
单重态
纳米技术
原子物理学
物理
激发态
图层(电子)
作者
Jibiao Jin,Mei Chen,He Jiang,Baohua Zhang,Zhiyuan Xie,Wai‐Yeung Wong
标识
DOI:10.1002/adom.202400794
摘要
Abstract Developing multi‐resonance thermally activated fluorescence (MR‐TADF) emitters with both fast reverse intersystem crossing (RISC) rate and narrow emission bandwidth still remains a formidable challenge. Herein, a design strategy of fused MR skeleton containing heavy chalcogen (sulfur or selenium) for high‐performance MR‐TADF molecules is developed. Impressively, Se‐embedded emitter ( DSeBN ) shows extremely narrow full width at half maximum (FWHM) value of 16 nm and ultrafast RISC rate constant up to 2.0 × 10 6 s −1 . The organic light‐emitting diode (OLED) based on this emitter exhibits excellent performance parameters with extremely narrow FWHM of 17 nm and high external quantum efficiency (EQE) of 35.31%. Significantly, much suppressed efficiency roll‐off is achieved, in which the EQE still stayed at 32.47% and 25.05% at the luminance of 100 and 1000 cd m −2 , respectively. These results represent the state‐of‐the‐art device performance in terms of efficiency and FWHM, shedding new light on the development of practical MR‐TADF emitters.
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