Spin filtering and quantum transport with transition metal-doped hydrogenated silicon quantum dot

Spin filtering is a fundamental operation in spintronics, enabling the generation and detection of spin-polarized carriers. Here, we proposed and theoretically demonstrated that a 3d transition metal (TM) doped hydrogenated silicon quantum dot (TM:H-SiQD) is a suitable candidate for spin-filter devices. Using density functional theory, we investigate the structure, electronic properties, and magnetic behavior of TM:H-SiQD. Our calculations demonstrate that Mn:H-SiQD exhibits the highest stability. The designed spin-filter device using Mn:H-SiQD shows a spin-filtering efficiency of 99.9% at 300 K electrode temperature along with very high conductance. This remarkable efficiency positions it as a promising candidate for spintronic devices.