材料科学
共发射极
太阳能电池
光电子学
外延
能量转换效率
电流密度
量子效率
异质结
兴奋剂
图层(电子)
化学气相沉积
短路
聚合物太阳能电池
开路电压
硅
电压
纳米技术
电气工程
物理
工程类
量子力学
作者
Lei Zhang,Honglie Shen,Zhihao Yue,Feng Jiang,Tianru Wu,Yuan-Yuan Pan
出处
期刊:Chinese Physics B
[IOP Publishing]
日期:2013-01-01
卷期号:22 (1): 016803-016803
被引量:10
标识
DOI:10.1088/1674-1056/22/1/016803
摘要
A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd (Sd=PH3/(PH3+SiH4+H2)) on the performance of the solar cell is studied by means of current density—voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.
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