材料科学
电介质
有机场效应晶体管
栅极电介质
晶体管
聚合物
光电子学
单层
场效应晶体管
高-κ电介质
纳米技术
磁滞
电压
复合材料
电气工程
凝聚态物理
物理
工程类
作者
Hang Ren,Mingzhao Ouyang,Jiake Wang,Lei Zhang,Yuegang Fu
标识
DOI:10.1016/j.matlet.2022.132495
摘要
Surface treatment for the polymer gate dielectric plays a significant role in achieving the high-performance flexible field-effect transistors. In this work, the direct SAM treatment on the polar polymer gate dielectric is introduced and the effects on the electrical performance of OFETs are investigated. After an appropriate SAM treatment for the polar polymer dielectric, the mobility can be improved and the hysteresis and interfacial trap states are decreased obviously. Moreover, the SAM treated polymer dielectric is used to achieve the ultra-flexible OFET successfully, with a stable electrical performance under various deformations. These results demonstrate that the direct SAM treatment on polar polymer dielectric is a promising strategy for the high-performance flexible organic transistors, presenting the huge potential for the next-generation flexible electronics.
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