钴
化学机械平面化
十二烷基苯磺酸钠
水溶液
吸附
无机化学
过硫酸钾
材料科学
乙二胺四乙酸
苯并三唑
锡
间苯二酚
化学
聚合
螯合作用
有机化学
纳米技术
聚合物
冶金
图层(电子)
复合材料
作者
Jihoon Seo,S. S. R. K. Hanup Vegi,C. K. Ranaweera,N. K. Baradanahalli,Ja-Hyung Han,Dinesh Koli,S. V. Babu
摘要
The use of benzotriazole (BTA) during Co film planarization leads to the undesirable formation of insoluble Co-BTA complexes, which can be observed as organic residues on various surfaces after polishing. Here, we investigated the formation of Co-BTA complexes at different pH values and their adsorption and removal from Co, TiN, SiN, and SiO2 film surfaces relevant to Co interconnect applications. The stability constant, log Keq, of Co2+-BTA complex was determined from its spectroscopic properties and log Keq was found to lie between 2.7 and 3.9 in the pH range of 6 ∼ 12, much smaller than that of Co3+-ethylenediaminetetraacetic acid (EDTA) complexes (log Keq = 36.0). Using this data, and recognizing that potassium persulfate (K2S2O8) and EDTA can lead to oxidation and ligand exchange of Co2+-BTA complexes, respectively, we were able to remove Co-BTA complexes adsorbed on all films by exposing them to aqueous solutions of 50 mM EDTA, 1.5 wt% K2S2O8, and 1 mM sodium dodecylbenzenesulfonate (SDBS) at pH 12. SDBS was helpful in lowering ΔEcorr to about 10 mV for the Co/TiN couple as well as the corrosion currents of Co film.
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