光电探测器
突触
晶体管
光电子学
材料科学
半导体
长时程增强
计算机科学
神经科学
电气工程
化学
工程类
心理学
生物化学
电压
受体
作者
Seong Kwang Kim,Dae‐Myeong Geum,Hyeong-Rak Lim,Jae‐Hoon Han,Hyungjun Kim,YeonJoo Jeong,Sang-Hyeon Kim
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2020-04-01
卷期号:41 (4): 605-608
被引量:15
标识
DOI:10.1109/led.2020.2971321
摘要
In this letter, we propose the photo-responsible synaptic devices by using stackable GaAs photodetectors (PDs) and Ge-on-insulator (Ge-OI) synaptic transistors for the future three-dimensional (3D) artificial vision sensors. The photo-responsible synapse showed good photo-responding synaptic behaviors depending on the incident light to GaAs PD, which changes the hole injection into the Ge-OI transistors, resulting in the change in potentiation/depression characteristics. The training simulation highlighted the fabricated photo-responsible synapse can provide high colored pattern recognition tasks for semiconductor-based hardware systems.
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