Fabrication and electrochemical properties of boron-doped SiC

Silicon carbide (SiC) has excellent properties such as chemical and physical stability, biocompatibility, and high thermal conductivity. However, electrical conductivity of SiC is not high enough for electrochemical applications, which has been a major challenge. Here, in order to improve the conductivity, we prepared boron-doped SiC (SiC:B) and evaluated the electrochemical properties. SiC and SiC:B were fabricated by a microwave plasma chemical vapor deposition method. Structural characterization revealed that the main phase of SiC:B is 3C–SiC where the concentration of doped boron could be controlled by tuning the growth conditions. Electrochemical properties were evaluated by cyclic voltammetry measurements, indicating that the reactivity and sensitivity of the SiC:B electrode was comparable of that of the glassy carbon electrode. • Boron-doped silicon carbide (SiC:B) was fabricated. • SiC:B was mainly composed of the 3C–SiC phase. • Silicon or carbon atoms were replaced with boron atoms. • The SiC:B electrode showed high reactivity and durability. • Sensitivity of the SiC:B electrode was comparable to that of glassy carbon.