材料科学
铁电性
二极管
范德瓦尔斯力
电场
光电子学
极化(电化学)
异质结
肖特基势垒
薄膜
极化密度
肖特基二极管
石墨烯
凝聚态物理
纳米技术
电介质
磁场
物理
化学
磁化
有机化学
物理化学
量子力学
分子
作者
Siyuan Wan,Yue Li,Wei Li,Xiaoyu Mao,Wenguang Zhu,Hualing Zeng
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2018-01-01
卷期号:10 (31): 14885-14892
被引量:186
摘要
Nanoscaled room-temperature ferroelectricity is ideal for developing advanced non-volatile high-density memories. However, reaching the thin film limit in conventional ferroelectrics is a long-standing challenge due to the possible critical thickness effect. Van der Waals materials, thanks to their stable layered structure, saturate interfacial chemistry and weak interlayer couplings, are promising for exploring ultra-thin two-dimensional (2D) ferroelectrics and device applications. Here, we demonstrate a switchable room-temperature ferroelectric diode built upon a 2D ferroelectric {\alpha}-In2Se3 layer as thin as 5 nm in the form of graphene/{\alpha}-In2Se3 heterojunction. The intrinsic out-of-plane ferroelectricity of the {\alpha}-In2Se3 thin layers is evidenced by the observation of reversible spontaneous electric polarization with a relative low coercive electric field of ~$2 X 10^5 V/cm$ and a typical ferroelectric domain size of around tens ${\mu}m^2$. Owing to the out-of-plane ferroelectricity of the {\alpha}-In2Se3 layer, the Schottky barrier at the graphene/{\alpha}-In2Se3 interface can be effectively tuned by switching the electric polarization with an applied voltage, leading to a pronounced switchable double diode effect with an on/off ratio of ~$10^4$. Our results offer a new way for developing novel nanoelectronic devices based on 2D ferroelectrics.
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