Memory Devices: Filament‐Free Bulk Resistive Memory Enables Deterministic Analogue Switching (Adv. Mater. 45/2020)

In article number 2003984, Yiyang Li, A. Alec Talin, and co-workers design a deterministic nonvolatile resistive memory cell without nanosized filaments. By using the statistical ensemble behavior of all point defects within the 3D bulk for information storage, they solve the challenge of stochastic switching that has plagued filament-based memristors. This provides a compelling artificial synapse for energy-efficient, neuromorphic computing.