磁电阻
自旋电子学
凝聚态物理
材料科学
同质结
范德瓦尔斯力
堆积
量子隧道
金属
高原(数学)
反平行(数学)
纳米技术
磁场
光电子学
铁磁性
核磁共振
化学
物理
兴奋剂
有机化学
数学分析
冶金
量子力学
数学
分子
作者
Junghyun Kim,Suhan Son,Matthew J. Coak,Inho Hwang,Jeong Yong Lee,Kaixuan Zhang,Je‐Geun Park
摘要
Controlling the stacking of van der Waals (vdW) materials is found to produce exciting new findings, since hetero- or homo-structures have added the diverse possibility of assembly and manipulated functionalities. However, so far, the homostructure with a twisted angle based on the magnetic vdW materials remains unexplored. Here, we achieved a twisted magnetic vdW Fe3GeTe2 (FGT)/Fe3GeTe2 junction with broken crystalline symmetry. A clean and metallic vdW junction is evidenced by the temperature-dependent resistance and the linear I–V curve. Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed in the magnetotransport of our homojunction due to the antiparallel magnetic configurations of the two FGT layers. The PMR ratio is found to be ∼0.05% and gets monotonically enhanced as temperature decreases like a metallic giant magnetoresistance. Such a tiny PMR ratio is at least three orders of magnitude smaller than the tunneling magnetoresistance ratio, justifying our clean metallic junction without a spacer. Our findings demonstrate the feasibility of the controllable homostructure and shed light on future spintronics using magnetic vdW materials.
科研通智能强力驱动
Strongly Powered by AbleSci AI