Thermal stability and thermoelectric properties of Cd-doped nano-layered Cu2Se prepared using NaCl flux method*

Cu 2 Se is a promising “phonon liquid–electron crystal” thermoelectric material with excellent thermoelectric performance. In this work, Cd-doped Cu 2– x SeCd x ( x = 0, 0.0075, 0.01, and 0.02) samples were prepared using NaCl flux method. The solubility of Cd in Cu 2 Se at room temperature was less than 6%, and a second phase of CdSe was found in the samples with large initial Cd content ( x = 0.01 and 0.02). Field-emission scanning electron microscopic image showed that the arranged lamellae formed a large-scale layered structure with an average thickness of approximately 100 nm. Transmission electron microscopy demonstrated that doping of Cd atoms did not destroy the crystal integrity of Cu 2 Se. A small amount of Cd in Cu 2 Se could reduce the electrical and thermal conductivities of the material, thus significantly enhancing its thermoelectric performance. With the increase in Cd content in the sample, the carrier concentration decreased and the mobility increased gradually. Thermogravimetric differential thermal analysis showed that no weight loss occurred below the melting point. Excessive Cd doping led to the emergence of the second phase of CdSe in the sample, thus significantly increasing the thermal conductivity of the material. A maximum ZT value of 1.67 at 700 K was obtained in the Cu 1.9925 SeCd 0.0075 sample.