磷化铟
发光二极管
量子点
光电子学
材料科学
铟
二极管
壳体(结构)
砷化镓
复合材料
作者
Young S. Kim,Christian Ippen,Tonino Greco,Armin Wedel,Myeongjin Park,Changhee Lee,Chul Jong Han,Jiwan Kim
标识
DOI:10.1002/j.2168-0159.2013.tb06180.x
摘要
Abstract We investigated the optoelectronic characteristics of QD‐LEDs by tuning ZnS shell thickness of InP/ZnSe/ZnS multishell QDs. Current efficiency of our QD‐LEDs fabricated using thicker ZnS shell of QDs was enhanced up to 4.65 cd/A. It is one of the promising results reported so far for Cd‐free QD‐LEDs.
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