成核
马克西玛
扩散
晶体生长
动力学
增长率
Crystal(编程语言)
化学物理
热力学
材料科学
吸附
统计物理学
化学
结晶学
物理化学
物理
数学
计算机科学
经典力学
几何学
艺术
艺术史
程序设计语言
表演艺术
作者
Stephen Fletcher,Cameron Halliday,D. J. Gates,Mark Westcott,T. Lwin,Gill Nelson
出处
期刊:Journal of electroanalytical chemistry and interfacial electrochemistry
[Elsevier]
日期:1983-12-01
卷期号:159 (2): 267-285
被引量:352
标识
DOI:10.1016/s0022-0728(83)80627-5
摘要
The voltammetric response of some nucleation/growth processes is derived, for the early stages of crystal growth where intercrystal collisions are statistically improbable. The theory is formulated for both interfacial and diffusional control of the crystal growth kinetics. It is shown that nucleation on forward scans often triggers current maxima on reverse scans, and numerical data on this phenomenon are obtained from a computer program using realistic values of nucleation and growth rates. Some experimental data are then reported for systems that exhibit maxima. Finally, it is suggested that the existence of maxima can be used to diagnose nucleation/growth kinetics, because other types of rate control, such as charge transfer, adsorption, and semi-infinite linear diffusion, do not generally exhibit this behaviour.
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