材料科学
兴奋剂
等离子体
晶体管
场效应晶体管
湿度
光电子学
悬空债券
吸收(声学)
化学物理
纳米技术
复合材料
硅
化学
电压
气象学
电气工程
物理
量子力学
工程类
作者
Mikai Chen,Sungjin Wi,Hongsuk Nam,Greg Priessnitz,Xiaogan Liang
出处
期刊:Journal of vacuum science and technology
[American Vacuum Society]
日期:2014-10-02
卷期号:32 (6)
被引量:28
摘要
The authors present a study on transfer characteristics of plasma-doped MoS2 transistors with various MoS2 thicknesses and those acquired under different air humidity conditions. The MoS2 thickness-dependent characterization implies that plasma-assisted doping processes induce p-doping to multilayer MoS2 channels through a surface-charge-transferlike mechanism and the effective space-charge layer thickness is estimated to be ∼22 nm. The humidity-dependent characterization shows that plasma-doped MoS2 transistors exhibit a much more prominent dependence of the transfer characteristics on humidity in comparison with pristine MoS2-based transistors. This is attributed to the plasma-induced dangling bonds or absorbate centers on MoS2 surfaces, which can enhance the absorption of water molecules and result in additional p-doping to MoS2 transistors. This work advances the understanding of the effects of plasma doping processes on the electronic properties of MoS2 and provides important technical insights for making MoS2-based gas and chemical sensors.
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