能量(信号处理)
材料科学
兴奋剂
高斯分布
芯(光纤)
航程(航空)
窗口(计算)
态密度
电化学
亚苯基
物理
分析化学(期刊)
光电子学
凝聚态物理
计算机科学
光学
化学
聚合物
核磁共振
量子力学
电极
操作系统
复合材料
色谱法
作者
Iulian N. Hulea,H. B. Brom,Arjan J. Houtepen,Daniël Vanmaekelbergh,J. J. Kelly,Eric A. Meulenkamp
标识
DOI:10.1103/physrevlett.93.166601
摘要
Using an electrochemically gated transistor, we achieved controlled and reversible doping of poly(p-phenylene vinylene) in a large concentration range. Our data open a wide energy-window view on the density of states (DOS) and show, for the first time, that the core of the DOS function is Gaussian, while the low-energy tail has a more complex structure. The hole mobility increases by more than 4 orders of magnitude when the electrochemical potential is scanned through the DOS.
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