塞贝克系数
双极扩散
碲化物
材料科学
电子迁移率
电阻率和电导率
霍尔效应
凝聚态物理
熔点
热电效应
热力学
大气温度范围
半导体
碲化铋
分析化学(期刊)
电子
化学
冶金
光电子学
物理
复合材料
量子力学
色谱法
作者
Nguyễn Văn Đông,Pham Ngu Tung
标识
DOI:10.1002/pssb.19680300217
摘要
Abstract Measurements of the electrical resistivity, Hall coefficient, and thermoelectric power have been carried out for silver telluride over a large temperature range including both solid and liquid states. The analysis of the experimental data shows that in the solid state the transport properties are governed by an ambipolar process with an electron mobility much higher than the hole mobility (μ n = 10 μ p ). It is found that the temperatur dependence of the electron mobility can be represented by a T −3 ‐law. Deviations from the stoichimetric composition of Ag 2 Te have been studied. For all specimens, melting is accompanied by discontinuous variations in the transport propeties. Above the melting point, the magnitude of the measured parameters and their temperature dependence show that liquid silver telluride behaves as a semiconductor. The contribution of Ag + ions to transport phenomena is suggested to account for the behaviour of the electrical properties. Experimental data have been analysed in terms of conventional theories.
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