光致发光
单层
纳米材料
材料科学
带隙
半导体
纳米技术
纳米尺度
量子点
直接和间接带隙
光电子学
凝聚态物理
物理
作者
Andrea Splendiani,Liang Sun,Yuanbo Zhang,Tianshu Li,Jonghwan Kim,Chi Yung Chim,Giulia Galli,Feng Wang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2010-03-15
卷期号:10 (4): 1271-1275
被引量:8074
摘要
Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS2, a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS2 crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS2 provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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