An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application

Abstract Semi‐floating gate (SFG) memory based on 2D materials shows ultrahigh‐speed operations and fills the huge gap between volatile memory and nonvolatile memory technology in time scale. In this study, a SFG FET with a programmable rectification mode based on the 2D WS 2 is achieved. The innovative use of the quasi‐non‐volatile programmable p–n junction photovoltaic effect successfully provides an ultra‐low power consumption photovoltaic quasi‐non‐volatile memory. The device exhibits a switching ratio of more than 10 7 at constant drain‐source voltage V ds = ±5 V. In the p–n junction mode, after removing the gate voltage for 1 h, the rectification ratio of the device is 10 5 . Combined with ultra‐fast operation speed, which can provide perspectives on possible directions of the next generation for low‐power high‐speed semi‐floating gate FET applications.