放大器
线性
线性化
CMOS芯片
NMOS逻辑
电子工程
计算机科学
电阻式触摸屏
运算放大器
电气工程
晶体管
工程类
电压
物理
非线性系统
量子力学
作者
Ziwei Li,Fuller W. Bazer,Yutong Zhao,Fan Ye,Junyan Ren
标识
DOI:10.1109/isocc53507.2021.9613883
摘要
Residue amplifier is a crucial part of a pipelined ADC design. The linearity of the residue amplifier directly affects the linearity of the pipelined ADC. This paper introduces the resistive degeneration linearization technique into dynamic residue amplifier designs. Both NMOS and CMOS dynamic amplifiers are implemented and simulated with a 28nm CMOS technology at 100MS/s. The simulation results show over -77dB THD for both dynamic amplifiers with large output swings after a foreground calibration.
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