材料科学
碳纳米管
光电子学
微电子机械系统
纳米机电系统
纳米技术
制作
CMOS芯片
热氧化
电介质
硅
纳米医学
医学
病理
纳米颗粒
替代医学
作者
D. Popa,Richard Hopper,Syed Zeeshan Ali,Matthew T. Cole,Ye Fan,Vlad-Petru Veigang-Radulescu,Rohit Chikkaraddy,Jayakrupakar Nallala,Yanpeng Xing,Jack A. Alexander‐Webber,Stephan Hofmann,Andrea De Luca,Julian W. Gardner,F. Udrea
标识
DOI:10.1038/s41598-021-02121-5
摘要
The gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 [Formula: see text]C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 [Formula: see text]C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Things.
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