56‐1: Enhancing Response Time of Quantum‐Dot‐Based TFT Photosensor with Self‐Assembled Monolayer

Quantum‐dot‐based a‐IGZO phototransistor has become one of the promising devices for image sensor application due to its bandgap tunability and solution‐process compatibility. However, the QD phototransistor with a‐IGZO, which contains a large amount of charge traps on the surface, exhibited slow photoresponse (τ decay >10 s). In this work, the photocurrent and decay time were significantly enhanced by 2.2 times and 73%, respectively, by introducing a self‐assembled monolayer (SAM), which effectively passivates the traps at the QD/a‐IGZO interface.